 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| RF MOSFET Power Transistor, ISW, 12V 2 - 175 MHz Features l l l l l l DU1215S N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices Specifically Designed for 12 Volt Applications .w Input Capacitance Output Capacitance Reverse Capacitance Power Gain Drain Efficiency Load Mismatch Tolerance C ISS C OSS 9.5 60 - 50 60 pF pF pF dB % - VD,=12.0 V, F=l .O MHz V&2.0 V&2.0 V, F=l .OMHz V, F=l .OMHz Gss GP % VSWR-T 12 3O:l V,,=12.0 V, lDcl=lOO mA. PO*1 5 W, F=175 MHz VD,=12.0 V, l&O0 mA, PO,=15 W, F=175 MHZ VDD=12.0 I,,=100 mA, PO,=15 W, F=l75 MHz V, Specifications Subject to Change Without Notice. M/A-COM, Inc. North America: Tel. (800) 366-2266 Fax (800) 618-8883 n Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 n Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 RF MOSFET Power Transistor, 15W, 12V DU1215S v2.00 Typical Device Impedance Frequency (MHz) 30 100 175 Z,, (OHMS) 3.0 - j 25 3.0-j 15 Z LOAD (OHMS) 4.0 - j 3.0 3.5-j1.5 4.0 + j 0.0 P,,,=l5 Watts 5.0 - j 8 V,,=12 V, I,,=1 00 mA, Z,, is the series equivalent input impedance of the device from gate to source. as measured from drain to ground. isthe optimum series equivalent Z LOAD load impedance RF Test Fixture VGS J3 VDS J4 VDS = 12 VOLTS IDO= lOOmA L4 -1, Cl0 Cl1 cc. 1 I 1 I RF IN Jl II 01 L3 T T Al w PARTS LIST Cl .a c2.c7 C3.C6 wc5 c9 Cl0 Cl1 Ll ,L3 12 TRIMMER TRIMMER SEMCO CAPAClTOR CAPACITOR CAPACITOR CSGQF 44opF 3OpF O.OOluF FEEDTHROUGH SEMCO CAPACfTOR lDOOpF CAPACITOR MONOLITHIC ELECTROLMIC CERAMIC CAPACITOR O.OluF CAPACITOR 5OuF 50 V. NO. 12 AWG COPPER 6 TURNS `025'. WIRE X 1` WIRE ON OF NO. 20 AWG ENAMEL CLOSE WOUND OF NO. 20 AWG ON `0.29. L4 12 TURNS CLOSE WOUND Film a1 BOARD RESISTOR DU1215S FR4 0.062 1OOK OHMS Specifications Subject to Change Wtiout Notice. M/A-COM, Inc. North America: Tel. (800) 366-2266 Fax (800) 618-8883 m Asia/Pacific: Tel. t81 (03) 3226-1671 Fax +81 (03) 3226-1451 n Europe: Tel. t44 (1344) 869 595 Fax +44 (1344) 300 020 RF MOSFET Power Transistor, 15W, 12V DU1215S v2.00 Typical Broadband Performance Curves EFFICIENCY 8o 8 vs FREQUENCY mA P,,,.=l5 W 30 GAIN vs FREQUENCY V,,=l2 V IDO= 00 mA P,,fl5 W VD,=l 2 V IDo= 00 25 10 0 50 100 150 200 1 25 50 100 150 175 FREQUENCY (MHZ) FREQUENCY (MHz) POWER OUTPUT V,,=l2 vs POWER INPUT POWER OUTPUT vs SUPPLY V,,=12 V F=l75 MHz Ppl VOLTAGE .O W V I,,=1 00 mA 0.1 0.2 0.3 0.5 0.75 1.5 2 2.5 3 POWER INP": (W) SUPPLY VOLTAGE (V) Specifications Subject to Change Wiiaut Notice. M/A-COM, North America: Tel. (800) 366-2266 Fax (800) 618-8883 m Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 n Inc. Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 |
Price & Availability of DU1215S
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |